050-7005 rev c 11-2003 maximum ratings all ratings: t c = 25c unless otherwise specified. g d s caution: these devices are sensitive to electrostatic discharge. proper handling procedures should be followed. apt website - http://www.advancedpower.com to-247 d 3 pak apt5016bll apt5016sll 500v 30a 0.160 ? ? lower input capacitance increased power dissipation lower miller capacitance easier to drive lower gate charge, qg to-247 or surface mount d 3 pak package power mos 7 ? is a new generation of low loss, high voltage, n-channel enhancement mode power mosfets. both conduction and switchinglosses are addressed with power mos 7 ? by significantly lowering r ds(on) and q g . power mos 7 ? combines lower conduction and switching losses along with exceptionally fast switching speeds inherent with apt'spatented metal gate structure. power mos 7 r mosfet characteristic / test conditionsdrain-source breakdown voltage (v gs = 0v, i d = 250a) drain-source on-state resistance 2 (v gs = 10v, 15a) zero gate voltage drain current (v ds = 500v, v gs = 0v) zero gate voltage drain current (v ds = 400v, v gs = 0v, t c = 125c) gate-source leakage current (v gs = 30v, v ds = 0v) gate threshold voltage (v ds = v gs , i d = 1ma) symbol v dss i d i dm v gs v gsm p d t j ,t stg t l i ar e ar e as parameterdrain-source voltage continuous drain current @ t c = 25c pulsed drain current 1 gate-source voltage continuousgate-source voltage transient total power dissipation @ t c = 25c linear derating factoroperating and storage junction temperature range lead temperature: 0.063" from case for 10 sec. avalanche current 1 (repetitive and non-repetitive) repetitive avalanche energy 1 single pulse avalanche energy 4 unit volts amps volts watts w/c c amps mj static electrical characteristics symbol bv dss r ds(on) i dss i gss v gs(th) unit volts ohms ana volts min typ max 500 0.160 100500 100 35 apt5016bll-sll 500 30 120 3040 329 2.63 -55 to 150 300 3030 1300 downloaded from: http:///
050-7005 rev c 11-2003 dynamic characteristics apt5016bll- sll note: duty factor d = t 1 / t 2 peak t j = p dm x z jc + t c t 1 t 2 p dm single pulse z jc , thermal impedance (c/w) 10 -5 10 -4 10 -3 10 -2 10 -1 1.0 rectangular pulse duration (seconds) figure 1, maximum effective transient thermal impedance, junction-to-case vs pulse duration 0.400.35 0.30 0.25 0.20 0.15 0.10 0.05 0 0.5 0.1 0.3 0.7 0.9 0.05 1 repetitive rating: pulse width limited by maximum junction temperature 2 pulse test: pulse width < 380 s, duty cycle < 2% 3 see mil-std-750 method 3471 4 starting t j = +25c, l = 2.89mh, r g = 25 , peak i l = 30a 5 dv / dt numbers reflect the limitations of the test circuit rather than the device itself. i s - 30a di / dt 700a/s v r 500v t j 150 c 6 eon includes diode reverse recovery. see figures 18, 20. apt reserves the right to change, without notice, the specifications and information contained herein. characteristic / test conditionscontinuous source current (body diode) pulsed source current 1 (body diode) diode forward voltage 2 (v gs = 0v, i s = -30 a ) reverse recovery time (i s = -30 a , dl s /dt = 100a/s) reverse recovery charge (i s = -30 a , dl s /dt = 100a/s) peak diode recovery dv / dt 5 unit amps volts ns c v/ns min typ max 30 120 1.3 540 7.36 8 symbol r jc r ja min typ max 0.38 40 unitc/w characteristicjunction to case junction to ambient symbol i s i sm v sd t rr q rr dv / dt symbol c iss c oss c rss q g q gs q gd t d(on) t r t d(off) t f e on e off e on e off characteristicinput capacitance output capacitance reverse transfer capacitance total gate charge 3 gate-source charge gate-drain ("miller") charge turn-on delay time rise time turn-off delay time fall time turn-on switching energy 6 turn-off switching energyturn-on switching energy 6 turn-off switching energy min typ max 2833 600 6072 16 42 10 10 27 14 256172 476 215 unit pf nc ns j source-drain diode ratings and characteristics thermal characteristics test conditions v gs = 0v v ds = 25v f = 1 mhz v gs = 10v v dd = 250v i d = 30a @ 25c resistive switching v gs = 15v v dd = 250v i d = 30a @ 25c r g = 1.6 inductive switching @ 25c v dd = 333v, v gs = 15v i d = 30a, r g = 5 inductive switching @ 125c v dd = 333v, v gs = 15v i d = 30a, r g = 5 downloaded from: http:///
r ds (on), drain-to-source on resistance i d , drain current (amperes) i d , drain current (amperes) (normalized) v gs (th), threshold voltage bv dss , drain-to-source breakdown r ds (on), drain-to-source on resistance i d , drain current (amperes) (normalized) voltage (normalized) 0 5 10 15 20 25 30 0 2 4 6 8 10 0 10 20 30 40 50 60 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150 100 8060 40 20 0 3025 20 15 10 50 2.52.0 1.5 1.0 0.5 0.0 8060 40 20 0 1.2 1.15 1.1 1.05 1.0 0.95 0.9 1.151.10 1.05 1.00 0.95 0.90 0.85 1.21.1 1.0 0.9 0.8 0.7 0.6 t j = +125c t j = +25c t j = -55c v ds > i d (on) x r ds (on)max. 250sec. pulse test @ <0.5 % duty cycle v gs =10v v gs =20v 15 &10v 6v 5.5v 6.5v 7v 7.5v 8v typical performance curves 050-7005 rev c 11-2003 apt5016bll - sll v ds , drain-to-source voltage (volts) figure 2, transient thermal impedance model figure 3, low voltage output characteristics v gs , gate-to-source voltage (volts) i d , drain current (amperes) figure 4, transfer characteristics figure 5, r ds (on) vs drain current t c , case temperature (c) t j , junction temperature (c) figure 6, maximum drain current vs case temperature figure 7, breakdown voltage vs temperature t j , junction temperature (c) t c , case temperature (c) figure 8, on-resistance vs. temperature figure 9, threshold voltage vs temperature normalized to v gs = 10v @ 15a i d = 15a v gs = 10v 0.01740.143 0.219 0.00401 f 0.00641 f 0.158f power (watts) junctiontemp. ( c) rc model case temperature. ( c) downloaded from: http:///
v ds =250v v ds =100v v ds =400v v ds , drain-to-source voltage (volts) v ds , drain-to-source voltage (volts) figure 10, maximum safe operating area figure 11,capacitance vs drain-to-source voltage q g , total gate charge (nc) v sd , source-to-drain voltage (volts) figure 12, gate charges vs gate-to-source voltage figure 13, source-drain diode forward voltage v gs , gate-to-source voltage (volts) i d , drain current (amperes) i dr , reverse drain current (amperes) c, capacitance (pf) 1 5 10 50 100 500 0 10 20 30 40 50 0 10 20 30 40 50 60 70 80 90 100 0.3 0.5 0.7 0.9 1.1 1.3 1.5 120 10 1 1614 12 10 86 4 2 0 10,000 5,0001,000 100 10 200100 5010 51 t j =+150c t j =+25c c oss c iss apt5016bll - sll c rss t c =+25c t j =+150c single pulse operation here limited by r ds (on) 10ms 1ms 100s 050-7005 rev c 11-2003 typical performance curves i d (a) i d (a) figure 14, delay times vs current figure 15, rise and fall times vs current i d (a) r g , gate resistance (ohms) figure 16, switching energy vs current figure 17, switching energy vs. gate resistance v dd = 333v r g = 5 t j = 125c l = 100h e on e off t r t f switching energy ( j) t d(on) and t d(off) (ns) switching energy ( j) t r and t f (ns) 0 10 20 30 40 50 0 10 20 30 40 50 01 02 03 04 05 0 051 01 52 02 53 03 54 04 55 0 v dd = 333v i d = 30a t j = 125c l = 100h e on includes diode reverse recovery. t d(on) t d(off) e on e off 6050 40 30 20 10 0 1000 800600 400 200 0 v dd = 333v r g = 5 t j = 125c l = 100h v dd = 333v r g = 5 t j = 125c l = 100h e on includes diode reverse recovery. 6050 40 30 20 10 0 12001000 800600 400 200 0 i d = 30 downloaded from: http:///
apt5016bll - sll 15.49 (.610) 16.26 (.640) 5.38 (.212) 6.20 (.244) 6.15 (.242) bsc 4.50 (.177) max. 19.81 (.780) 20.32 (.800) 20.80 (.819) 21.46 (.845) 1.65 (.065) 2.13 (.084) 1.01 (.040) 1.40 (.055) 3.50 (.138) 3.81 (.150) 2.87 (.113) 3.12 (.123) 4.69 (.185) 5.31 (.209) 1.49 (.059) 2.49 (.098) 2.21 (.087) 2.59 (.102) 0.40 (.016) 0.79 (.031) drain drain source gate 5.45 (.215) bsc dimensions in millimeters and (inches) 2-plcs. to - 247 package outline 15.95 (.628) 16.05 (.632) 1.22 (.048) 1.32 (.052) 5.45 (.215) bsc {2 plcs.} 4.98 (.196) 5.08 (.200) 1.47 (.058) 1.57 (.062) 2.67 (.105) 2.84 (.112) 0.46 (.018) {3 plcs} 0.56 (.022) dimensions in millimeters (inches) heat sink (drain) and leads are plated 3.81 (.150) 4.06 (.160) (base of lead) drain (heat sink) 1.98 (.078) 2.08 (.082) gate drain source 0.020 (.001) 0.178 (.007) 1.27 (.050) 1.40 (.055) 11.51 (.453) 11.61 (.457) 13.41 (.528) 13.51 (.532) revised 8/29/97 1.04 (.041) 1.15 (.045) 13.79 (.543) 13.99 (.551) revised 4/18/95 d 3 pak package outline apts products are covered by one or more of u.s.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. us and foreign patents pending. all rights reserved. figure 18, turn-on switching waveforms and definitions figure 19, turn-off switching waveforms and definitions i c d.u.t. apt30df60 v ce figure 20, inductive switching test circuit v dd g 050-7005 rev c 11-2003 90% t d(off) t j = 125 c 10% 0 90% t f t d(off) switching energy gate voltage drain voltage drain current 10 % 10 % 5 % 5 % 90% t r t d(on) drain current drain voltage gate voltage t j = 125 c switching energy downloaded from: http:///
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